Germanium epi-ready wafers: Typical specifications
| Growth Method | VGF |
| Diameter | up to 6" |
| Grade | mono crystalline |
| Typical Orientations | (100) with 6° off towards (111) (100), (110), (111) variety of other orientations possible |
| Doping | p-type - Ga doped n-type - P doped variety of other doping materials possible |
| Resistivity Range | typically 5-50 mohm.cm ultra high dopings <1 mohm.cm possible radial dispersion on a single wafer: <10% |
| EPD | < 300/cm2 (typically about 100/cm2) |
| Flat Length and Orientation | SEMI Standards |
| Wafer Thickness | 150µm for 4" wafers variety of other thicknesses possible |
| TTV, Surface Roughness | <10µm, <10A |
| Edge Surface Finish | etched |
| Surface Finish | front side: polished - epi-ready backside: pre-polished/etched |
| Packaging | individual wafer boxes under inert gas, boxes evacuated and sealed in moisture barrier bag and transparent outer bag |